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RQK0301FGDQS
Silicon N Channel MOS FET Power Switching
REJ03G1269-0300 Rev.3.00 Jun 22, 2006
Features
* Low on-resistance RDS(on) = 28 m typ (VGS = 10 V, ID = 3 A) * Low drive current * High speed switching * 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
2, 4 D 2 3 1G 4 S 3 1 1. Gate 2. Drain 3. Source 4. Drain
Note:
Marking is "FG". *UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Symbol VDSS VGSS ID Ratings 30 20 6 8.8 6 1.5 5 150 -55 to +150 Unit V V A A A W W C C
Drain peak current ID (pulse)Note1 Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel dissipation Pch (pulse)Note1 Channel temperature Tch Storage temperature Tstg Notes: 1. PW 1 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Rev.3.00 Jun 22, 2006 page 1 of 6
RQK0301FGDQS
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 30 20 -- -- 1.0 -- -- 6.9 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 28 35 11.5 750 112 61 13 39 51 4.0 12 1.8 2.1 0.75 Max -- -- 10 1 2.0 35 49 -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 3 A, VGS = 10 VNote3 ID = 3 A, VGS = 4.5 VNote3 ID = 3 A, VDS = 10 VNote3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, VGS = 10 V, RL = 10 , Rg = 4.7
VDD = 10 V, VGS = 10 V, ID = 6 A IF = 1.5 A, VGS = 0Note3
Rev.3.00 Jun 22, 2006 page 2 of 6
RQK0301FGDQS
Main Characteristics
Maximum Channel Power Dissipation Curve
2.0 100 Operation in this area is limited by RDS(on) 10
1m
100 s
Maximum Safe Operation Area
Channel Dissipation Pch (W)
1.5
Drain Current ID (A)
PW =1
s
1.0
1
s 0m
D C O tio ra pe n
0.5
0.1
Ta = 25C 1 Shot Pulse
0 0 25 50 75 100 125 150
0.01 0.01
0.1
1
10
100
Ambient Temperature Ta (C)
*When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
6 5
2.8 V 3V 5V 4V 8V 10 V 2.4 V
Typical Transfer Characteristics (1)
6 VDS = 5 V Pulse Test
2.6 V Pulse Test Tc = 25C
5
Drain Current ID (A)
4 3 2 1
Drain Current ID (A)
4 3 Tc = 75C 2 1 0 0 25C -25C
2.2 V VGS = 0 V 2V
0
0
1
2
3
4
5
1
2
3
4
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Typical Transfer Characteristics (2)
Gate to Source Cutoff Voltage VGS(off) (V)
1 VDS = 5 V Pulse Test 10
Case Temperature
Drain Current ID (A)
0.1
Tc = 75C
ID = 10 mA 1
0.01
25C -25C
100 A
1 mA
0.001
VDS = 10 V Pulse Test 0.1 -25 0 25 50 75 100 125 150
0.0001 0
1
2
3
4
Gate to Source Voltage VGS (V)
Case Temperature Tc (C)
Rev.3.00 Jun 22, 2006 page 3 of 6
RQK0301FGDQS
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Pulse Test Tc = 25C
Drain to Source Saturation Voltage VDS(on) (V)
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) ()
0.3
100 VGS = 4.5 V 10 V 10
0.2 ID = 3 A 2A 1.5 A 0.1
1A
0.5 A 0 0 2 4 6 8 10
Pulse Test Tc = 25C 1 0.1 1 10 100
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Case Temperature
Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature
Drain to Source on State Resistance RDS(on) (m)
60 Pulse Test VGS = 4.5 V 50 1.5 A 1A 0.5 A 40 ID = 3 A 2A
Drain to Source on State Resistance RDS(on) (m)
50 Pulse Test VGS = 10 V 1.5 A 40 1A 0.5 A 30 ID = 3 A 2A
30
20 -25
0
25
50
75
100 125 150
20 -25
0
25
50
75
100 125 150
Case Temperature Tc (C)
Case Temperature Tc (C)
100
Zero Gate Voltage Drain current IDSS (nA)
Forward Transfer Admittance vs. Drain Current
Zero Gate Voltage Drain current vs. Case Temperature
Pulse Test VGS = 0 V VDS = 30 V 1000
Forward Transfer Admittance |yfs| (S)
10000
Pulse Test VDS = 10 V
10
-25C
25C Tc = 75C
1
100
10
0.1 0.1
1
10
100
1 -25
0
25
50
75
100 125 150
Drain Current ID (A)
Case Temperature Tc (C)
Rev.3.00 Jun 22, 2006 page 4 of 6
RQK0301FGDQS
Dynamic Input Characteristics Switching Characteristics
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
100 ID = 6.0 A Tc = 25C 80 VDD =10 V 20 V 40 VDS VDD = 20 V 10 V 0 4 8 12 16
20
1000
tf
Switching Time t (ns)
16 VGS 12
td(off)
100
VDD = 10 V VGS = 10 V Rg = 4.7 PW = 5 s Tc = 25C
60
8
td(on)
10
20
4 0 20
tr
0
1 0.01
0.1
1.0
10
Gate Charge Qg (nC)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
1000 Ciss 1150 1100 1050 1000 950 Crss VGS = 0 V f = 1 MHz 0 10 20 30 900 850 -10
Input Capacitance vs. Gate to Source Voltage
Ciss, Coss, Crss (pF)
100
Coss
Ciss (pF)
VDS = 0 V f = 1 MHz -5 0 5 10
10
Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage
6
Gate to Source Voltage VGS (V) Body-Drain Diode Forward Voltage vs. Case Temperature
0.8 VGS = 0
5 4
VGS = 10 V
Pulse Test Tc = 25C
Body-Drain Diode Forward Voltage VSDF (V)
Reverse Drain Current IDR (A)
0.6 ID = 10 mA 0.4 1 mA
5V 3 2 1 0 0V -5 V, -10 V 0 0.4 0.8 1.2 1.6 2.0
0.2 -25
0
25
50
75
100 125
150
Source Drain Voltage VSD (V)
Case Temperature Tc (C)
Rev.3.00 Jun 22, 2006 page 5 of 6
RQK0301FGDQS
Package Dimensions
Package Name UPAK JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Previous Code UPAK / UPAKV MASS[Typ.] 0.050g
Unit: mm
4.5 0.1
1.5 1.5 3.0
Ordering Information
Part Name RQK0301FGDQSTL-E Quantity 1000 pcs. Shipping Container 178 reel, 12 mm Emboss taping
Rev.3.00 Jun 22, 2006 page 6 of 6
0.8 Min
0.44 Max
(0.4)
0.53 Max 0.48 Max
(2.5)
1
2.5 0.1 4.25 Max
0.4
1.8 Max
1.5 0.1 0.44 Max
(1.5)
(0.2)
Sales Strategic Planning Div.
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